adva nced power electronics corp. ?2010 advanced power electronics corp. usa www.a-powerusa.com dss ds(on) d description absolute maximum ratings thermal data bv 30v fast switching performance r 1.8mw rohs-compliant, halogen-free low profile (< 0.7mm ) i 32a o rdering information ap1002b m x-3 1/5 201008094-3 AP1002BMX-3 tr rohs-compliant halogen-free greenfet tm m x package , shipped on tape and reel ( 4800 pcs /reel) g d s n-channel enhancement-mode power mosfet low conductance losses the AP1002BMX-3 use s the latest apec power mosfet silicon tm to provide the lowest on-resistance, a low profile and dual - sided co oling capability . the greenfe t tm package is compatible with existing soldering techniques and is ideal for power application s , especially for high- frequency/high - efficiency dc-dc converters. symbol units v ds v gs i d at t a =2 5 c i d at t a = 7 0 c i d at t c =2 5 c i dm p d at t a =2 5 c p d at t a =7 0 c p d at t c =2 5 c e as mj i ar a t stg t j rthj-c maximum thermal resistance, junction- case 4 1.4 c /w rthj-a maximum thermal resistance, junction-ambient 3 45 c /w 180 a 28.8 2. 8 w -40 to 150 c parameter rating drain-source voltage 3 0 v gate-source voltage 20 v continuous drain current 3 32 a 24 total power dissipatio n 3 1. 8 w 89 w total power dissipation 3 continuous drain curren t 3 25 a pulsed drain curren t 1 25 0 a continuous drain current 4 storage temperature range -40 to 150 c avalanche current single pulse avalanche energy 5 operating junction temperature range total power dissipation 4 technology with advanced technology greenfet packaging g s s d d greenfet tm m x
adva nced power electronics corp. ?2010 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) source-drain diode this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. AP1002BMX-3 2/5 symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =32a - 1.3 1.8 mw v gs =4.5v, i d =25a - 1.9 3 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1.2 - 2.35 v g fs forward transconductance v ds =10v, i d =25a 45 80 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 1 ua drain-source leakage current (t j =125 o c) v ds =24v ,v gs =0v - - 150 ua i gss gate-source leakage v gs = 20v, v ds =0v - - 100 na q g total gate charge 2 i d =25a - 29 46 nc q gs gate-source charge v ds =15v - 6.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 14 - nc t d(on) turn-on delay time 2 v ds =16v - 14 - ns t r rise time i d =25a - 90 - ns t d(off) turn-off delay time r g = 1.2w , v gs = 10 v - 36 - ns t f fall time r d = 0.64w - 11 - ns input capacitance v gs =0v - 3350 5360 pf c oss output capacitance v ds =25v - 1000 - pf c rss reverse transfer capacitance f=1.0mhz - 320 - pf r g gate resistance f=1.0mhz - 1.3 - w symbol parameter test conditions min. typ. max. units i s continuous source current (body diode) - - 110 a i sm pulsed source current (body diode) 1 - - 250 a v sd forward on voltage 2 i s =25a, v gs =0v - - 1 v t rr reverse recovery time i s =25a, v gs =0v, - 55 83 ns q rr reverse recovery charge di/dt=100a/s - 75 113 nc notes: 1.pulse width limited by maximum junction temperature. 2.pulse test 4.t c measured with thermocouple mounted to top (drain) of part. 5.starting t j =25 o c, l=0.1mh, r g =25w 3.surface mounted on 1 in 2 copper pad of fr4 board.
adva nced power electronics corp. ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics AP1002BMX-3 3/5 0 40 80 120 160 200 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v ds , drain-to-source voltage (v) i d , dr a i n c u r r e nt (a ) t a =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 40 80 120 160 200 240 0.0 1.0 2.0 3.0 4.0 v ds , drain-to-source voltage (v) i d , dr a i n c u r r e nt (a ) t a =25 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j , junction temperature ( o c) n o rmalize d r ds(on) i d =32a v g =10v 1 1.4 1.8 2.2 2.6 3 246 8 1 0 v gs , gate-to-source voltage (v) r ds(on) ( m w ) i d =25a t a =2 5c 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a ) t j =25 o c t j =150 o c 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j ,junction temperature ( o c) n o rmalize d v gs(t h) (v )
adva nced power electronics corp. ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform typical electrical characteristics (cont.) AP1002BMX-3 4/5 q v g 4.5v q gs q gd q g charge t d(on) t r t d(off) t f v ds v gs 10% 90% 0 2 4 6 8 10 0 1 0 2 03 04 0 5 06 0 q g , total gate charge (nc) v gs , g a te to s o u rc e voltage ( v ) i d =25a 0 1000 2000 3000 4000 5000 6000 1 5 9 1 31 72 1 2 52 9 v ds , drain-to-source voltage (v) c ( p f) f =1.0mhz c iss c oss c rss v ds =15v v ds =18v v ds =24v 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a ) t a =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) n o rmalize d t h e rmal re spon se ( r th ja ) p dm duty factor = t/t peak t j = p dm x r thjc + t c rthja = 4 5 c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse operation in this area limited by r ds(on)
adva nced power electronics corp. ?2010 advanced power electronics corp. usa www.a-powerusa.com package dimensions: medium size can mx marking information: AP1002BMX-3 5/5 1. all d imensions a re in m illimeters. laser marking product number: 10 2 b = ap100 2 b date code y y : last digits of the year w w : work week logo 102b xxxx yyww lot number gate marking 2. for information on solder stencil and substrate design, please contact apec at support@a-powerusa.com millimeters min nom max a 6.25 6.30 6.35 b 4.80 4.93 5.05 c 3.85 3.90 3.95 d 0.35 0.40 0.45 e 0.68 0.70 0.72 f 0.68 0.70 0.72 g 1.38 1.40 1.42 h 0.80 0.82 0.84 j 0.38 0.40 0.42 k 0.88 0.95 1.01 l 2.28 2.35 2.41 m 0.59 0.65 0.70 n 0.03 0.06 0.08 symbols d e g a k l m n f c h j b
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